I am a consultant chartered Physicist with a background in "cutting edge fundamental research" in Solid State Physics. This blue skies science involves a material that has the potential to significantly impact the wide band-gap Semiconductor market in the forseeable future. I am an active member of the Institute of Physics (IoP) and the Royal Institution (RI) of Great Britain as well as a Fellow of the Royal Astronomical Society (RAS). I also regularly attend lectures at the Royal Society in the Mall and it's former home Gresham College in Holborn. I demonstrate Physics at the University of London and participate in Physics Update conferences (enhancing network & educational links). I frequently submit work to meetings & international conferences. I completed my Ph.D. in the School of Crystallography at Birkbeck College, using the technique of X-Ray Diffraction Topography (XRDT) to study the prolific behaviour of Silicon Carbide to form polytypes. Professor Paul Barnes and I share a common interest in the polytypism and one-dimensional disorder exhibited by this burgeoning semiconductor. The experimental work with single crystal Silicon Carbide using White Radiation Synchrotron X-ray Topography (SRS-XRDT) was carried out on the Station 7.6 camera at Daresbury Laboratory, using the UK National Synchrotron Radiation Source.
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IT & Computing update C++ course Oct-Dec 2000 Java short course May 2000 C programming Cavendish School of Computer Science Westminster University Jan-Apr 2000 HTML Authoring course Oct-Nov 99 |
| Topography station 7.6 single crystal experiment |
My latest research includes experimental investigation of the boundaries of long period polytypes in this fascinating meteoritic abrasive gemstone. It has rightly earned the sobriquet "semiconductor of the 21st century". One could use a roadmap for its use under the slogan Higher, Hotter, Harder ( H 3) reflecting the properties of SiC as a large power (Watts), high temperature radiation hard (EG ~ 3 eV) semiconductor . Work is also being undertaken on modeling of polytype boundaries to map nearest neighbour polytype coalescence SRS-XRDT data. Regions of high defect density & Long Period Polytypes (LPP's) in multipolytypic SiC crystals are also being explored with Scanning Electron Microscopy Cathodoluminescence. Currently we are interested in the limits of polytypism and disorder suggested by quantitative measurements of LPP layer thickness and estimation of the number of polytype repeats in the stacking sequence. These appear to indicate a natural finite limit to polytypism in SiC. The data fit an empirical relationship: y = k x - n which has recently been published in the American journal Materials Research Bulletin .
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