SiC Edges
Most of the measurements in the survey have been taken along the 314l diffraction row of the edge topographs. Central hk.0 reflections provide diffraction contrast from the whole crystal, frequently containing bands of high defect density which provide darker diffraction contrast on topographs.
Polytypes displaced along the row contain morphological clues as to their location along the crystal edge and therefore provide invaluable clues in building a depth profile of the crystal.
The crystals used in this survey were grown at the GEC Hirst Research Centre U.K. during the late 1960’s early 1970’s as part of their semiconductor research programme.